Pressure sensors
For almost every purpose
- low dead volume (≤ 47 μl)
- self-venting
- calibrated and temperature compensated
- effective media resistance
(parts in contact with medium: Teflon, silicon) - pressure range: 0 up to 10bar
(35 bar maximum pressure without irreversible damages) - short-circuit proof output
- TTL (5V) supply voltage
- internal voltage reference: 0,5 up to 4,5V output
Supply voltage: 4,8 ...5,3V
Environmental conditions:
Storage temperature: -55°C - +100°CAmbient temperature during operation: -40°C - + 85°C
Relative humidity: 0...95%
FEM-simulation
Of the mechanical tensionHighlighted by red arrows
Measuring effect:
Piezo resistant is formed by a p-endowed diffused resistance in a n-endowed semiconductor substrate.
If this substrate and with it also the Piezo-resistant-mechanical tensions is put out, the electrical resistance changes.
Typical characteristics
All details at supply voltage = 5,00V, RL > 100kΩ, temp = 25°C (if not noted separately)
| characteristics | min. | typ. | max. | unit | |
| Offset at 0 bar | 0,4 | 0,5 | 0,6 | V | |
| Measuring span | 3,9 | 4,0 | 4,1 | V | |
| Final rash at nominal pressure | 4,5 | V | |||
| Thermal effects | Offset | ±1 | %FSS1 | ||
| (-40 to +85°C) | Measuring span | ±2 | %FSS1 | ||
| Repeatability and hysteresis | ±0,2 | %FSS1 | |||
| Long-term stability2 | ±0,5 | %FSS1 | |||
| Non-linearity (BSL)3 | ±0,5 | %FSS1 | |||
| Power conusmption | 10 | mA | |||
| Reaction time | 1 | ms | |||
